| PART |
Description |
Maker |
| IC62VV1008LL IC62VV1008L IC62VV1008L-100B IC62VV10 |
70ns; 1.8V; 1M x 8 ultra low power CMOS static RAM
1 M x 8 bit Low Voltage and Ultra Low Power CMOS Static RAM
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
100ns; 1.8V; 1M x 8 ultra low power CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| IS62WV12816BLL-45B IS62WV12816BLL-45B2 IS62WV12816 |
128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
|
| IS65WV12816BLL IS65WV12816ALL |
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
|
| IS65WV25616BLL IS65WV25616BLL-55TA1 IS65WV25616BLL |
256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
|
Integrated Silicon Solution, Inc
|
| IS62WV10248BLL-70BI IS62WV10248BLL-55BLI IS62WV102 |
1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
|
| IS66WV1M16DALL IS66WV1M16DBLL |
16Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
|
| BS616UV1610FI BS616UV1610 BS616UV1610BC BS616UV161 |
Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit
|
BSI[Brilliance Semiconductor]
|
| BS616UV4010EI BS616UV4010 BS616UV4010BC BS616UV401 |
Ultra Low Power/Voltage CMOS SRAM 256K X 16 bit
|
BSI[Brilliance Semiconductor]
|
| N02L63W3AB25I N02L63W3AB5IT N02L63W3A |
2 Mb Ultra-Low Power Asynchronous CMOS SRAM
2 Mb, 3 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tape and Reel; Qty per Container: 2500 128K X 16 STANDARD SRAM, 70 ns, PBGA48
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K ? 16bit
|
ON Semiconductor
|
| BS616UV1010CI |
150ns 15-10mA 1.8-2.6V ultra low power/voltage CMOS SRAM 64K x 16bit
|
Brilliance Semiconductor
|
| GLT6200L16LI-70FG GLT6200L16LI-85TC GLT6200L16LI-5 |
70ns; Ultra low power 128K x 16 CMOS SRAM
85ns; Ultra low power 128K x 16 CMOS SRAM
55ns; Ultra low power 128K x 16 CMOS SRAM
|
G-LINK Technology
|
